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d a t a sh eet product speci?cation file under integrated circuits, ic01 december 1987 integrated circuits TDA1572 am receiver circuit
december 1987 2 philips semiconductors product speci?cation am receiver circuit TDA1572 general description the TDA1572 integrated am receiver circuit performs all the active functions and part of the filtering required of an am radio receiver. it is intended for use in mains-fed home receivers and car radios. the circuit can be used for oscillator frequencies up to 50 mhz and can handle rf signals up to 500 mv. rf radiation and sensitivity to interference are minimized by an almost symmetrical design. the controlled-voltage oscillator provides signals with extremely low distortion and high spectral purity over the whole frequency range, even when tuning with variable capacitance diodes. if required, band switching diodes can easily be applied. selectivity is obtained using a block filter before the if amplifier. features inputs protected against damage by static discharge gain-controlled rf stage double balanced mixer separately buffered, voltage-controlled and temperature-compensated oscillator, designed for simple coils gain-controlled if stage with wide agc range full-wave, balanced envelope detector internal generation of agc voltage with possibility of second-order filtering buffered field strength indicator driver with short-circuit protection af preamplifier with possibilities for simple af filtering electronic standby switch if output for stereo demodulator and search tuning. quick reference data package outline 18-lead dil; plastic (sot102); sot102-1; 1996 august 12. parameter symbol min. typ. max. unit supply voltage range v p 7,5 - 18,0 v supply current range i p 15 - 30 ma rf input voltage for (s + n)/n = 6 db at m = 30% v i(rf) - 1,5 -m v rf input voltage for 3% total harmonic distortion (thd) at m = 80% v i(rf) - 500 - mv if output voltage with v i = 2 mv v o(if) - 230 - mv af output voltage with v i = 2 mv; f i = 1 mhz; m = 30%; f m = 400 hz v o(af) - 310 - mv agc range: change of v i for 1 db change of v o(af) - 86 - db field strength indicator voltage at v i = 500 mv; r l(11) = 2,7 k w v ind - 2,8 - v
december 1987 3 philips semiconductors product speci?cation am receiver circuit TDA1572 fig.1 block diagram and test circuit (connections shown in broken lines are not part of the test circuit). (1) coil data: toko sample no. 7xns-a7523dy; l1 : n1/n2 = 12/32; q o = 65; q b = 57. filter data: z f = 700 w at r 3-4 = 3 k w ; z i = 4,8 k w . (2) af output is pin 6 is not used.
december 1987 4 philips semiconductors product speci?cation am receiver circuit TDA1572 functional description gain-controlled rf stage and mixer the differential amplifier in the rf stage employs an agc negative feedback network to provide a wide dynamic range. very good cross-modulation behaviour is achieved by agc delays at the various signal stages. large signals are handled with low distortion and the (s + n)/n ratio of small signals is improved. low noise working is achieved in the differential amplifier by using transistors with low base resistance. a double balanced mixer provides the if output signal to pin 1. oscillator the differential amplifier oscillator is temperature compensated and is suitable for simple coil connection. the oscillator is voltage-controlled and has little distortion or spurious radiation. it is specially suitable for electronic tuning using variable capacitance diodes. band switching diodes can easily be applied using the stabilized voltage v 13-18 . an extra buffered oscillator output (pin 12) is available for driving a synthesizer. if this is not needed, resistor r l(12) can be omitted. gain-controlled if ampli?er this amplifier comprises two cascaded, variable-gain differential amplifier stages coupled by a band-pass filter. both stages are gain-controlled by the agc negative feedback network. the if output is available at pin 10. detector the full-wave, balanced envelope detector has very low distortion over a wide dynamic range. residual if carrier is blocked from the signal path by an internal low-pass filter. af preampli?er this stage preamplifies the audio frequency output signal. the amplifier output has an emitter follower with a series resistor which, together with an external capacitor, yields the required low-pass for af filtering. agc ampli?er the agc amplifier provides a control voltage which is proportional to the carrier amplitude. second-order filtering of the agc voltage achieves signals with very little distortion, even at low audio frequencies. this method of filtering also gives fast agc settling time which is advantageous for electronic search tuning. the agc settling time can be further reduced by using capacitors of smaller value in the external filter (c16 and c17). the agc voltage is fed to the rf and if stages via suitable agc delays. the capacitor at pin 7 can be omitted for low-cost applications. field strength indicator output a buffered voltage source provides a high-level field strength output signal which has good linearity for logarithmic input signals over the whole dynamic range. if the field strength information is not needed, r l(11) can be omitted. standby switch this switch is primarily intended for am/fm band switching. during standby mode the oscillator, mixer and af preamplifier are switched off. short-circuit protection all pins have short-circuit protection to ground.
december 1987 5 philips semiconductors product speci?cation am receiver circuit TDA1572 ratings limiting values in accordance with the absolute maximum rating system (iec 134) thermal resistance parameter symbol min. max. unit supply voltage v p = v 15-18 - 20 v total power dissipation p tot - 875 mw input voltage ? v 16-17 ?- 12 v - v 16-18, - v 17-18 - 0,6 v v 16-18 , v 17-18 - v p v input current ? i 16 ? , ? i 18 ?- 200 ma operating ambient temperature range t amb - 40 + 85 c storage temperature range t stg - 55 + 150 c junction temperature t j -+ 125 c from junction to ambient r th j-a 80 k/w
december 1987 6 philips semiconductors product speci?cation am receiver circuit TDA1572 characteristics v p = v 15-18 = 8,5 v; t amb = 25 c; f i = 1 mhz; f m = 400 hz; m = 30%; f if = 460 khz; measured in test circuit of fig.1; all voltages referenced to ground; unless otherwise speci?ed. parameter symbol min. typ. max. unit supply supply voltage (pin 15) v p 7,5 8,5 18,0 v supply current (pin 15) i p 15 23 30 ma rf stage and mixer (pins 16 and 17) dc input voltage v i - v p /2 - v rf input impedance at v < 300 m vz i - 5,5 - k w rf input capacitance c i - 25 - pf rf input impedance at v i > 10 mv z i - 8 - k w rf input capacitance c i - 22 - pf if output impedance (pin 1) z o 200 -- k w if output capacitance c o - 6 - pf conversion transconductance before start of agc i 1 /v i - 6,5 - ma/v maximum if output voltage, inductive coupling to pin 1 (peak-to-peak value) v 1-15(p-p) - 5 - v dc value of output current; at v i = 0 v (pin 1) i o - 1,2 - ma agc range of input stage - 30 - db rf signal handling capability: (r.m.s. value): input voltage for thd = 3% at m = 80% v i(rms) - 500 - mv oscillator frequency range f osc 0,1 - 60 mhz oscillator amplitude (pins 13 to 14) v - 130 150 mv external load impedance (pins 14 to 13) r (ext) 0,5 - 200 k w external load impedance for no oscillation (pins 14 to 13) r (ext) -- 60 w ripple rejection at v p(rms) = 100 mv; f p = 100 hz (svrr = 20 log [v 15 /v 13 ]) rr - 55 - db source voltage for switching diodes (6 v be ) (pin 13) v - 4,2 - v dc output current (for switching diodes) (pin 13) - i o 0 - 20 ma change of output voltage at d l 13 = 20 ma (switch to maximum load) (pin 13) d v i - 0,3 - v
december 1987 7 philips semiconductors product speci?cation am receiver circuit TDA1572 buffered oscillator output (pin 12) dc output voltage v o - 0,8 - v output signal amplitude (peak-to-peak value) v o(p-p) - 320 - mv output impedance z o - 170 -w output current - i o(peak) -- 3ma if, agc and af stages dc input voltage (pins 3 and 4) v i - 2,0 - v if input impedance (pins 3 to 4) z i 2,4 3,0 3,9 k w if input capacitance c i - 7 - pf if input voltage for thd = 3% at m = 80% (pins 3 and 4) v i - 90 - mv if output impedance (pin 10) z o - 50 -w unloaded if output voltage at v i = 10 mv (pin 10) v o 180 230 290 mv voltage gain before start of agc (pins 3 to 4; 6 to 18) g v - 68 - db agc range of if stages: change of v 3-4 for 1 db change of v o(af); v 3-4 (ref) = 75 mv d v v - 55 - db af output voltage at v 3-4(if) = 50 m vv o(af) - 130 - mv af output voltage at v 3-4(if) = 1 mv v o(af) - 310 - mv af output impedance (pin 6) ? z o ? 2,8 3,5 4,2 k w indicator driver (pin 11) output voltage at v i = 0 mv; r l = 2,7 k w v o -- 140 mv output voltage at v i = 500 mv; r l = 2,7 k w v o 2,5 2,8 3,1 v load resistance r l 1,5 -- k w standby switch switching threshold at; v p = 7,5 to 18 v t amb = - 40 to + 80 c on-voltage v 2-1 0 - 2,0 v off-voltage v 2-1 3,5 - 20,0 v on-current at v 2-1 = 0 v - i 2 - 100 200 m a off-current at v 2-1 = 20 v ? i 2 ?-- 10 m a parameter symbol min. typ. max. unit
december 1987 8 philips semiconductors product speci?cation am receiver circuit TDA1572 operating characteristics v p = 8,5 v; f i = 1 mhz; m = 30%; f m = 400 hz; t amb = 25 c; measured in fig.1; unless otherwise speci?ed parameter symbol min. typ. max. unit rf sensitivity rf input required for (s + n)/n = 6 db v i - 1,5 -m v rf input required for (s + n)/n = 26 db v i - 15 -m v rf input required for (s + n)/n = 46 db v i - 150 -m v rf input at start of agc v i - 30 -m v rf large signal handling rf input at thd = 3%; m = 80% v i - 500 - mv rf input at thd = 3%; m = 30% v i - 700 - mv rf input at thd = 10%; m = 30% v i - 900 - mv agc range change of v i for 1 db change of v o(af) ; v i(ref) = 500 mv d v i - 86 - db change of v i for 6 db change of v o(af) ; v i(ref) = 500 mv d v i - 91 - db output signal if output voltage at v i = 2 mv v o(if) 180 230 290 mv af output voltage at v i = 4 m v; m = 80% v o(af) - 130 - mv af output voltage at v i = 2 mv v o(af) 240 310 390 mv thd at v i = 1 mv d tot - 0,5 - % thd at v i = 500 mv d tot - 1 - % signal plus noise-to-noise ratio at v i = 100 mv (s + n)/n - 58 - db ripple rejection at v i = 2 mv; v p(rms) = 100 mv; f p = 100 hz (svrr = 20 log [v p /v o(af) ]) rr - 38 - db a) additional af signal at if output rr - 0* - db b) add modulation at if output (m ref = 30%) rr - 40 - db
december 1987 9 philips semiconductors product speci?cation am receiver circuit TDA1572 * af signals at the if output will be suppressed by a coupling capacitor to the demodulator and by full wave-detection in the demodulator. ** value to be fixed. application information unwanted signals suppression of if whistles at v i = 15 m v; m = 0% related to af signal of m = 30% at f i ? 2 f if a 2if - ** - db at f i ? 3 f if a 3if - ** - db if suppression at rf input; for symmetrical input a if - 40 - db for asymmetrical input a if - 40 - db residual oscillator signal at mixer output; at f osc i 1(osc) - 1 -m a at 2 f osc i 1(2osc) - 1,1 -m a parameter symbol min. typ. max. unit fig.2 oscillator circuit using quartz crystal; centre frequency = 27 mhz. (1) capacitor values depend on crystal type. (2) coil data: 9 windings of 0,1 mm dia laminated cu wire on toko coil set 7k 199cn; q o = 80.
december 1987 10 philips semiconductors product speci?cation am receiver circuit TDA1572 fig.3 af output as a function of rf input in the circuit of fig.1; f i = 1 mhz; f m = 400 hz; m = 30%. fig.4 total harmonic distortion and (s + n)/n as functions of rf input in the circuit of fig.1; m = 30% for (s + n)/n curve and m = 80% for thd curve. fig.5 total harmonic distortion as a function of modulation frequency at v i = 5 mv; m = 80%; measured in the circuit of fig.1 with c 7-18(ext) = 0 m f and 2,2 m f.
december 1987 11 philips semiconductors product speci?cation am receiver circuit TDA1572 fig.6 indicator driver voltage as a function of rf input in the circuit of fig.1. fig.7 typical frequency response curves from fig.1 showing the effect of filtering as follows: ?????? with if filter; ? - ? - ? with af filter; - - - - - - with if and af filters. fig.8 car radio application with inductive tuning.
december 1987 12 philips semiconductors product speci?cation am receiver circuit TDA1572 fig.9 af output as a function of rf input using the circuit of fig.8 with that of fig.1. fig.10 suppression of cross-modulation as a function of input signal, measured in the circuit of fig.8 with the input circuit as shown in fig.11. curve is for wanted v o(af) /unwanted v o(af) = 20 db; v rfw, v rfu are signals at the aerial input, v aew, v aeu are signals at the unloaded output of the aerial. wanted signal (v aew, v rfw ): f i = 1 mhz; f m = 400 hz; m = 30%. unwanted signal (v aeu, v rfu ): f i = 900 khz; f m = 400 hz; m = 30%. effective selectivity of input tuned circuit = 21 db.
december 1987 13 philips semiconductors product speci?cation am receiver circuit TDA1572 fig.11 input circuit to show cross-modulation suppression (see fig.10). fig.12 oscillator amplitude as a function of pin 13, 14 impedance in the circuit of fig.8.
december 1987 14 philips semiconductors product speci?cation am receiver circuit TDA1572 fig.13 total harmonic distortion and (s + n)/n as functions of rf input using the circuit of fig.8 with that of fig.1. fig.14 forward transfer impedance as a function of intermediate frequency for filters 1 to 4 shown in fig.15; centre frequency = 455 khz.
december 1987 15 philips semiconductors product speci?cation am receiver circuit TDA1572 fig.15 if filter variants applied to the circuit of fig.1. for filter data, refer to table 1.
december 1987 16 philips semiconductors product speci?cation am receiver circuit TDA1572 fig.16 if output voltage as a function of rf input in the circuit of fig.1; f i = 1 mhz.
december 1987 17 philips semiconductors product speci?cation am receiver circuit TDA1572 table 1 data for if ?lters shown in fig.15. criteria for adjustment is z f = maximum (optimum selectivity curve at centre frequency f 0 = 455 khz). see also fig.14. * the beginning of an arrow indicates the beginning of a winding; n1 is always the inner winding, n2 the outer winding. filter no. 1 2 3 4 unit coil data l1 l1 l1 l2 l1 value of c 3900 430 3900 4700 3900 pf n1: n2 12 : 32 13 : (33 + 66) 15 : 31 29 : 29 13 : 31 diameter of cu laminated wire 0,09 0,08 0,09 0,08 0,09 mm q o 65 (typ.) 50 75 60 75 schematic* of windings (n1) (n2) toko order no. 7xns-a7523dy l7pes-a0060btg 7xns-a7518dy 7xns-a7521aih 7xns-a7519dy resonators murata type sfz455a sfz455a sfz455a sft455b d (typical value) 4 4 4 6 db r g , r l 33 3 3k w bandwidth ( - 3 db) 4,2 4,2 4,2 4,5 khz s 9khz 24 24 24 38 db filter data z i 4,8 3,8 4,2 4,8 k w q b 57 40 52 (l1) 18 (l2) 55 z f 0,70 0,67 0,68 0,68 k w bandwidth ( - 3 db) 3,6 3,8 3,6 4,0 khz s 9khz 35 31 36 42 db s 18khz 52 49 54 64 db s 27khz 63 58 66 74 db 12 32 66 13 33 15 31 29 29 13 31
december 1987 18 philips semiconductors product speci?cation am receiver circuit TDA1572 package outline references outline version european projection issue date iec jedec eiaj sot102-1 93-10-14 95-01-23 unit a max. 12 b 1 (1) (1) (1) b 2 cd e e m z h l mm dimensions (inch dimensions are derived from the original mm dimensions) a min. a max. b max. w m e e 1 1.40 1.14 0.53 0.38 0.32 0.23 21.8 21.4 6.48 6.20 3.9 3.4 0.254 2.54 7.62 8.25 7.80 9.5 8.3 0.85 4.7 0.51 3.7 inches 0.055 0.044 0.021 0.015 0.013 0.009 1.40 1.14 0.055 0.044 0.86 0.84 0.26 0.24 0.15 0.13 0.01 0.10 0.30 0.32 0.31 0.37 0.33 0.033 0.19 0.020 0.15 m h c (e ) 1 m e a l seating plane a 1 w m b 1 b 2 e d a 2 z 18 1 10 9 b e pin 1 index 0 5 10 mm scale note 1. plastic or metal protrusions of 0.25 mm maximum per side are not included. dip18: plastic dual in-line package; 18 leads (300 mil) sot102-1
december 1987 19 philips semiconductors product speci?cation am receiver circuit TDA1572 soldering introduction there is no soldering method that is ideal for all ic packages. wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. however, wave soldering is not always suitable for surface mounted ics, or for printed-circuits with high population densities. in these situations reflow soldering is often used. this text gives a very brief insight to a complex technology. a more in-depth account of soldering ics can be found in our ic package databook (order code 9398 652 90011). soldering by dipping or by wave the maximum permissible temperature of the solder is 260 c; solder at this temperature must not be in contact with the joint for more than 5 seconds. the total contact time of successive solder waves must not exceed 5 seconds. the device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (t stg max ). if the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. repairing soldered joints apply a low voltage soldering iron (less than 24 v) to the lead(s) of the package, below the seating plane or not more than 2 mm above it. if the temperature of the soldering iron bit is less than 300 c it may remain in contact for up to 10 seconds. if the bit temperature is between 300 and 400 c, contact may be up to 5 seconds. definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.

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